Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Patent
1998-03-13
1999-12-28
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
257778, H01L 31075
Patent
active
060085274
ABSTRACT:
A diode device for face down bonding use comprising: a semiconductor main body; a first region for forming an electrode, the region being exposed at a first surface of the semiconductor main body; a first electrode provided in the first region; a second region for forming another electrode, the second region being provided within the semiconductor main body; a third region conducting the second region to the first surface through the semiconductor main body; and a second electrode provided in the third region on the first surface.
REFERENCES:
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patent: 4250520 (1981-02-01), Denlinger
patent: 4608589 (1986-08-01), Goth et al.
patent: 4860083 (1989-08-01), Kojo
patent: 4999683 (1991-03-01), Kiyomura et al.
patent: 5181083 (1993-01-01), Pezzani
Hardy David B.
Toko Kabushiki Kaisha
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