Diode device

Details Diode device Diode device

1999-11-05

2000-11-28

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

257778, H01L 31075

Patent

active

06153921&

ABSTRACT:
Disclosed is a diode device in which two electrodes of regions forming both terminals are provided on the same face, thereby enabling the device to be connected to a circuit substrate by face-down bonding. Since a region is located within the semiconductor base, an electrode cannot be connected at the top face thereof; to overcome this, a groove is provided extending in a perpendicular direction from the top face of the semiconductor base to the region, and an electrode is provided in the groove. Then, the electrode in the groove is exposed at the top face, enabling the electrodes of both regions to be connected at the top face.

REFERENCES:
patent: 3821779 (1974-06-01), Usuda
patent: 4250520 (1981-02-01), Denlinger
patent: 4608589 (1986-08-01), Goth et al.
patent: 4860083 (1989-08-01), Kojo
patent: 4999683 (1991-03-01), Kiyomura et al.
patent: 5181083 (1993-01-01), Pezzani
patent: 5475257 (1995-12-01), Hashimoto et al.
patent: 6008527 (1999-12-01), Kasahara

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