Diode design to reduce the effects of radiation damage

Details Diode design to reduce the effects of radiation damage Diode design to reduce the effects of radiation damage

2007-08-21

2007-08-21

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370090, C250S370110, C257S457000, C257S452000

Reexamination Certificate

active

11300815

ABSTRACT:
A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

REFERENCES:
patent: 4999696 (1991-03-01), Gentner et al.
patent: 5962856 (1999-10-01), Zhao et al.
patent: 6617561 (2003-09-01), Wei et al.
patent: 2003/0201396 (2003-10-01), Lee
patent: 2004/0016869 (2004-01-01), Campbell et al.
patent: 2006/0131669 (2006-06-01), Albagli et al.

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