Fishing – trapping – and vermin destroying
Patent
1996-12-09
1998-02-03
Niebling, John
Fishing, trapping, and vermin destroying
437 40, 437 41, 437904, H01L 2104, H01L 21265
Patent
active
057143935
ABSTRACT:
A compact diode-connected semiconductor device (20) and a method of manufacturing the field effect transistor (10). A doped layer (44) is formed in a semiconductor substrate (41) which serves as a drain extension region. An oxide layer (46) is formed on the semiconductor substrate (41) and an opening (50) is formed in the oxide layer (46). A gate structure (81) having an active gate portion (78) and a gate shorting structure (22) are formed on the oxide layer (46). The gate shorting structure (22) and the portion of the semiconductor substrate (41) adjacent the active gate portion (78) are doped with an impurity material of the same conductivity type as the doped layer (44). The gate shorting structure (22) serves as a source of impurity material for the drain region.
REFERENCES:
patent: 5053849 (1991-10-01), Izawa et al.
patent: 5267194 (1993-11-01), Jang
patent: 5302536 (1994-04-01), Josquin
patent: 5358879 (1994-10-01), Brady et al.
"Field Effect-Transistor With Asymmetrical Structure", Codella et al., United States Statutory Invention Registration No. H986, Published Nov. 5, 1991, U.S. Class 437, Subclass 41, Application Filing Date Jun. 9, 1989.
Davies Robert B.
Wild Andreas A.
Dover Rennie William
Lebentritt Michael S.
Motorola Inc.
Niebling John
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