Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – As active junction in bipolar transistor
Patent
1991-10-28
1994-09-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
As active junction in bipolar transistor
257471, 257478, 307253, 307318, 307576, H01L 2948, H01L 2956, H01L 2964, H03K 1760
Patent
active
053492307
ABSTRACT:
A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a first end of the first conductivity type connected to a collector of the transistor and a second end of the second conductivity type connected to the second end of the constant voltage diode, and a high speed diode reverse-bias connected between the transistor collector and the emitter of the transistor.
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A.P. De Haas et al., "Pulsed Beam Measurement System," Nuclear Instruments & Methods in Physics Research, vol. B29, No. 1-2, Nov. 1987.
Fuji Electric & Co., Ltd.
Jackson Jerome
Wallace Valencia M.
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