Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-02-13
2007-02-13
Mai, Ahn D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S656000, C257SE29336
Reexamination Certificate
active
10865509
ABSTRACT:
A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.
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Ahrens Carsten
Hartung Wolfgang
Heuermann Holger
Losehand Reinhard
Schaffer Josef-Paul
Infineon - Technologies AG
Kunzer Brian E.
Maginot Moore & Beck
Mai Ahn D.
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