Diode and producing method thereof and contact image sensor devi

Details Diode and producing method thereof and contact image sensor devi Diode and producing method thereof and contact image sensor devi

1990-06-25

1991-09-24

James, Andrew J.

357 2, 357 58, H01L 4500, H01L 2714, H01L 3100, H01L 2912

Patent

active

050518038

ABSTRACT:
A pin diode having an incident layer which includes 1 to 10% of microcrystallized silicon is formed in a condition where a molar ratio of hydrogen to monosilane is 5:1 to 100:1 and applied power is 0.001 to 0.05 W/cm.sup.2. The pin diode as well as a contact image sensor comprising the same as excellent photoelectric transfer efficiency.

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Y. Osaka et al., "Microcrystalline Silicon (.mu.c-Si) Prepared by Plasma-Chemical Techniques" 80-91 JARECT vol. 16, Amorphous Semiconductor Technologies & Devices 1984.

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