Diode and producing method thereof

Details Diode and producing method thereof Diode and producing method thereof

2005-09-13

2005-09-13

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S653000, C257S654000

Reexamination Certificate

active

06943383

ABSTRACT:
A PN junction diode has a substrate1of a first conductivity type, and first and second stripe diffusion regions2, 3which are the first conductivity type and second conductivity type, respectively. The stripe diffusion regions are alternately arranged at a regular interval in a surface layer of the semiconductor substrate. The diode further includes first and second stripe electrodes7a, 7bconnected to the first and second diffusion regions along the longitudinal sides thereof, respectively. The diode further includes a third electrode7b′ which covers through an insulation film5, 5′ the neighboring ends of the first and second diffusion regions and of which a potential is equalized to that of the second electrode7bhaving a different conductivity type from the substrate.

REFERENCES:
patent: 6518604 (2003-02-01), Worley et al.
patent: 0345432 (1989-12-01), None
Kenji Kono, ESD surge simulation of IC for automobile, Technical Report of IEICE, SDM2002-184, vol. 102, No. 347, Oct. 1, 2002, pp31-36.

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