Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1997-02-19
1999-01-12
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
257121, 257104, 257109, 257161, 257288, 257551, 257603, H01L 2990
Patent
active
058594469
ABSTRACT:
In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p.sup.+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor layer of an n.sup.- conductivity type for obtaining a large critical di/dt.
REFERENCES:
patent: 4536816 (1985-08-01), Matsumura et al.
patent: 5162876 (1992-11-01), Kitagawa et al.
patent: 5574312 (1996-11-01), Bayerer et al.
Kobayashi Hideo
Mori Mutsuhiro
Nagasu Masahiro
Sakano Junichi
Abraham Fetsum
Hitachi , Ltd.
Loke Steven H.
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