Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2007-03-06
2007-03-06
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C257S474000, C257S484000, C257S928000
Reexamination Certificate
active
11072868
ABSTRACT:
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
REFERENCES:
patent: 3571674 (1971-03-01), Yu et al.
patent: 3891479 (1975-06-01), Zwernemann
patent: 4062033 (1977-12-01), Suzuki
patent: 4310362 (1982-01-01), Roche et al.
patent: 4691435 (1987-09-01), Anantha et al.
patent: 5101244 (1992-03-01), Mori et al.
patent: 5112774 (1992-05-01), Ohtsuka et al.
patent: 5163178 (1992-11-01), Gomi et al.
patent: 5262669 (1993-11-01), Wakatabe et al.
patent: 52-8778 (1977-01-01), None
patent: 52-8780 (1977-01-01), None
patent: 53-126871 (1978-11-01), None
patent: 54-017676 (1979-02-01), None
patent: 56-58286 (1981-05-01), None
patent: 58-039056 (1983-03-01), None
patent: 58-68986 (1983-04-01), None
patent: 02-109364 (1990-04-01), None
patent: 03-024767 (1991-02-01), None
patent: 6-85285 (1994-03-01), None
patent: 6-177365 (1994-06-01), None
patent: 07-263716 (1995-10-01), None
Fujihira Tatsuhiko
Miyasaka Yasushi
Fuji Electric Holdings Co., Ltd.
Pham Hoai
Rossi Kimms & McDowell LLP
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