Diode

Details Diode Diode

2008-01-03

2010-02-02

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

C257S487000, C257S492000, C257SE29327, C257SE21327, C257S558000

Reexamination Certificate

active

07656011

ABSTRACT:
A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

REFERENCES:
patent: 6351024 (2002-02-01), Ruff et al.
patent: 2003/0197247 (2003-10-01), Mauder et al.
patent: 2006/0118852 (2006-06-01), Rueb
patent: 2006/0258081 (2006-11-01), Kocon et al.

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