Diode

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient

Reexamination Certificate

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Details

C257S487000, C257S492000, C257SE29327, C257SE21327, C257S558000

Reexamination Certificate

active

07838969

ABSTRACT:
A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

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patent: 2006/0211179 (2006-09-01), Siemieniec et al.
patent: 2006/0258081 (2006-11-01), Kocon et al.
patent: 2007/0007587 (2007-01-01), Barthelmess et al.
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patent: 10240107 (2004-03-01), None
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patent: 102005009000 (2006-09-01), None
patent: 102005031398 (2007-01-01), None

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