Diode

Details Diode Diode

1993-12-23

1999-11-23

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257469, 257470, H01L 31058

Patent

active

059905344

ABSTRACT:
A diode suited for absorbing a surge which includes a semiconductor substrate, a pn junction defined in the semiconductor substrate, and an exothermic body adjacent to the pn junction which leads the pn junction to the Zener breakdown under an overcurrent is disclosed. This diode is improved in a characteristic against a surge utilizing the secondary breakdown and prevents the yield from lowering due to inconstancy in resistivity of the wafer used.

REFERENCES:
patent: 3286138 (1966-11-01), Shockley
Webster's II New Riverside University Dictionary p. 453, 1984.
Muller et al, `Device Electronics for IC` . . . pp. 257 and 270-271; 1986.
Gosch, `Temp range of Si sensors . . . `, pp. 74-75, Electronics, May 5, 1982.
Muller et al., "Device Electronics for Integrated Circuits"; copyright 1977, 1986; p. 31.

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