Dimension measurement of a semiconductor device

Details Dimension measurement of a semiconductor device Dimension measurement of a semiconductor device

1997-03-26

1998-07-14

Berman, Jack I.

Radiant energy

Methods including separation or nonradiant treatment of test...

250304, G01N 132, G01N 23225

Patent

active

057808520

ABSTRACT:
A feature (24) of a semiconductor device (10) is formed in a photoresist (14). To accurately measure a dimension (26) of the feature (24), portions of the photoresist (14) are removed to provide a reduced thickness (34) of the photoresist (14). The ratio between the reduced thickness (34) and the dimension (26) allows for more accurate dimension measurement of the feature (24) of the semiconductor device (10).

REFERENCES:
patent: 4670650 (1987-06-01), Matsuzawa et al.
patent: 4733074 (1988-03-01), Kato

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