Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1998-10-23
2000-12-19
Gulakowski, Randy
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430522, 134 28, G03F 900
Patent
active
061625655
ABSTRACT:
A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.
REFERENCES:
patent: 4670365 (1987-06-01), Yoshihara
patent: 5294570 (1994-03-01), Fleming, Jr. et al.
patent: 5382296 (1995-01-01), Anttila
patent: 5382484 (1995-01-01), Hosno
patent: 5650075 (1997-07-01), Hass et al.
patent: 5972794 (1999-10-01), Katakura
"Method and Chemicals for Mask-Cleaning Process" IBM Technical Disclosure Bulletin, vol. 33 No. 6B Nov., 1990, pp. 238-239.
Chao Virginia Chi-Chuen
Estes Scott A.
Faure Thomas B.
Wagner Thomas M.
Chaudhry Saeed
Gulakowski Randy
International Business Machines - Corporation
LandOfFree
Dilute acid rinse after develop for chrome etch does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dilute acid rinse after develop for chrome etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dilute acid rinse after develop for chrome etch will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-269746