Digitally controlled field effect attenuator devices

Details Digitally controlled field effect attenuator devices Digitally controlled field effect attenuator devices

1989-06-05

1991-03-19

Hille, Rolf

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 15, 333 81R, 307568, H01L 2980, H01L 2948, H01P 122, H02K 508

Patent

active

050015249

ABSTRACT:
A variable field effect attenuator suitable for providing digitally controlled attenuation characteristic is disclosed. The attenuator can include a first semiconductor region connected in a series path between the input and output terminals and at least one shunt semiconductor region connected between the series path and a reference potential conductor. First gate electrodes are arranged to operate with the series semiconductor region and second gate electrodes are arranged to operate with the shunt semiconductor region. Gate electrode control lines are connected to selected gate electrodes so that digital signals can be selectively applied to the gate electrodes to render the semiconductor material associated therewith either conductive or nonconductive to provide a plurality of predetermined amounts of attenuation between the input and output terminals in response to a digital code.

REFERENCES:
patent: 4511813 (1985-04-01), Pan
patent: 4734751 (1988-03-01), Hwang et al.
patent: 4875023 (1989-10-01), Maoz

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