Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...
Patent
1997-12-15
1999-12-21
Kunemund, Robert
Semiconductor device manufacturing: process
Chemical etching
Altering etchability of substrate region by compositional or...
438750, 438751, 438752, 438753, H01L 21302
Patent
active
060048816
ABSTRACT:
A room temperature wet chemical digital etching technique for, gallium arsenide or other semiconductor material. Hydrogen peroxide and an acid are used in a two step etching cycle to remove the gallium arsenide in approximately 15 .ANG. limited increments. In the first step of the cycle, gallium arsenide is oxidized by, for example, 30% hydrogen peroxide to form an oxide layer that is diffusion limited to a thickness of, for example, 14-17 .ANG. for time periods from 15 seconds to 120 seconds. The second step of the cycle removes this oxide layer with an acid that does not attack unoxidized gallium arsenide. These steps are repeated in succession using new reactant materials and cleaning after each reactant (to prevent reactant contamination) until the desired etch depth is obtained. Experimental results are presented demonstrating the etch rate and process invariability with respect to hydrogen peroxide and acid exposure times. A method for using a Hall effect measurement to determine the achieved change in surface layer thickness of doped semiconductor material is also included.
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Bozada Christopher A.
Cerny Charles L.A.
DeSalvo Gregory C.
Dettmer Ross W.
Ebel John L.
Goudreau George
Hollins Gerald B.
Kundert Thomas L.
Kunemund Robert
The United States of America as represented by the Secretary of
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