Digital radiographic flat-panel imaging array with dual...

Details Digital radiographic flat-panel imaging array with dual... Digital radiographic flat-panel imaging array with dual...

2011-06-28

2011-06-28

Hoang, Quoc D (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C257S093000

Reexamination Certificate

active

07968358

ABSTRACT:
A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.

REFERENCES:
patent: 7176528 (2007-02-01), Couillard et al.
patent: 7192844 (2007-03-01), Couillard et al.
patent: 7268051 (2007-09-01), Couillard et al.
patent: 2009/0186464 (2009-07-01), Morimoto et al.
Tredwell et al., “Imaging Array With Dual Height Semiconductor and Method of Making Same,” U.S. Appl. No. 12/474,332, filed May 29, 2009.

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