Digital parallel electron beam lithography stamp

Details Digital parallel electron beam lithography stamp Digital parallel electron beam lithography stamp

2006-05-05

2008-09-16

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492230, C250S492300

Reexamination Certificate

active

07425715

ABSTRACT:
An array of vertically aligned electron emitting nanotips such as multiwall carbon nanotubes are formed for use as a lithographic stamp. Crosswire addressing is used to generate electron emission from particular nanotips within the array. The nanotip array may be used to cure a resist, produce localized electrochemical reactions, establish localized electrostatic charge distributions, or perform other desirable coating or etching process steps so as to create nanoelectronic circuitry or to facilitate molecular or nanoscale processing.

REFERENCES:
patent: 4896044 (1990-01-01), Li et al.
patent: 4968390 (1990-11-01), Bard et al.
patent: 5047649 (1991-09-01), Hodgson et al.
patent: 5412641 (1995-05-01), Shinjo et al.
patent: 5973444 (1999-10-01), Xu et al.
patent: 6283812 (2001-09-01), Jin et al.
patent: 6504292 (2003-01-01), Choi et al.
patent: 6538367 (2003-03-01), Choi et al.
patent: 6660959 (2003-12-01), Vallance et al.
patent: 6864162 (2005-03-01), Jin
patent: 6885010 (2005-04-01), Traynor et al.
patent: 6899854 (2005-05-01), Darty
patent: 6917043 (2005-07-01), Thomas et al.
patent: 6962515 (2005-11-01), Dean et al.
patent: 6982519 (2006-01-01), Guillorn et al.
patent: 7011927 (2006-03-01), Iwamatsu
patent: 7012266 (2006-03-01), Jin
patent: 2002/0182542 (2002-12-01), Choi et al.
patent: 2003/0102444 (2003-06-01), Deppert et al.
patent: 2003/0209676 (2003-11-01), Loschner et al.
patent: 2004/0036398 (2004-02-01), Jin
patent: 2004/0140432 (2004-07-01), Maldonado et al.
patent: 2006/0118735 (2006-06-01), Kim et al.
patent: 2007/0279334 (2007-12-01), Mouttet
Mesquida et al., Maskless nanofabrication using the electrostatic attachment of gold particles to electrically patterned surfaces, Microelectronics Engineering, 2002, 671-674.
Lim et al., Electrostatically Driven Dip-Pen Nanolithography of Conducting Polymers, Advanced Materials, Adv. Materials, 2002, 1474-1477.
Suh et al., Study of the field-screening effect of highly ordered carbon nanotube arrays, Applied Physics Letters, 2002, 2392-2394.
Jeong et al., Fabrication of the aligned and patterned carbon nanotube field emitters using the anodic aluminum oxide nano-template on a Si wafer,Synthetic Metals,2003,385-390.
Kim et al., Growth of carbon nanotubes with anodic aluminum oxide formed on the catalytic metal-coated Si substrate, Diamond and Related Materials, 2003, 870-873.
Akita et al., Length Adjustment of Carbon Nanotube Probe by Electron Bombardment, Jpn. J. Appl. Phys., 2002, 4887-4889.

Affiliated with

Also associated with

Rating

Digital parallel electron beam lithography stamp does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Digital parallel electron beam lithography stamp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Digital parallel electron beam lithography stamp will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3991812