Digital memory cell device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE29167, C257SE29323, C438S003000, C360S324000, C428S822300, C428S822400, C428S822500

Reexamination Certificate

active

10479519

ABSTRACT:
A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

REFERENCES:
patent: 4780848 (1988-10-01), Daughton et al.
patent: 5428585 (1995-06-01), Hirokane et al.
patent: 5583727 (1996-12-01), Parkin
patent: 5585986 (1996-12-01), Parkin
patent: 5639547 (1997-06-01), Mitsuoka et al.
patent: 6205052 (2001-03-01), Slaughter et al.
patent: 6215631 (2001-04-01), Fujikata et al.
patent: 6219275 (2001-04-01), Nishimura
patent: 6233172 (2001-05-01), Chen et al.
patent: 6292389 (2001-09-01), Chen et al.
patent: 6303218 (2001-10-01), Kamiguchi et al.
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6348274 (2002-02-01), Kamiguchi et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6436526 (2002-08-01), Odagawa et al.
patent: 6480411 (2002-11-01), Koganei
patent: 6538919 (2003-03-01), Abraham et al.
patent: 6567246 (2003-05-01), Sakakima et al.
patent: 6721144 (2004-04-01), Carey et al.
patent: 2001/0020847 (2001-09-01), Mattheis et al.
patent: 2001/0026471 (2001-10-01), Michijima et al.
patent: 2002/0041515 (2002-04-01), Ikeda et al.
patent: 2002/0154456 (2002-10-01), Carey et al.
patent: 19830343 (2000-04-01), None
patent: 0 783 112 (1997-07-01), None
patent: 0 917 161 (1999-05-01), None
patent: WO 00/02006 (2000-01-01), None
Alvardo, S.F., Erbudak, M., Munz, P. “Final-state Effects In the 3d Photoelectron Spectrum of Fe3O4 and Comparison With FexO.” Phys. Rev. B. vol. 14 (Oct. 1, 1976): pp. 2740-2745.
German Search Report dated May 12, 2003, 9 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Digital memory cell device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Digital memory cell device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Digital memory cell device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3954478

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.