Digital memory cell device

Details Digital memory cell device Digital memory cell device

2008-03-25

2008-03-25

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE29167, C257SE29323, C438S003000, C360S324000, C428S822300, C428S822400, C428S822500

Reexamination Certificate

active

10479519

ABSTRACT:
A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

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