Digital memory apparatus

Static information storage and retrieval – Powering – Conservation of power

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365154, 365190, G11C 700, G11C 1140

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active

RE0307440

ABSTRACT:
A low power digital memory comprised of a matrix of memory cells suitable for fabrication by large scale integrated circuit techniques. Each memory cell is comprised of field effect transistors, preferably metal oxide semiconductors. A plurality of cells are fabricated on a single monolithic chip and are interconnected for coincident signal addressing. Power is conserved by periodically pulsing load transistors rather than biasing them continuously on.

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