Digital magnetic memory cell device

Details Digital magnetic memory cell device Digital magnetic memory cell device

2005-06-07

2005-06-07

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S414000, C257S422000, C257S427000

Reexamination Certificate

active

06903430

ABSTRACT:
A digital magnetic memory cell device for read and/or write operations has a soft-magnetic read and/or write layer system formed of at least one soft-magnetic read and/or write layer, and a hard-magnetic reference layer system. The two systems are separated by a barrier layer. The soft-magnetic read and/or write layer is an amorphous layer with an induced or inducible uniaxial anisotropy.

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S. Tsunashima et al.: “Spin valves using amorphous magnetic layers”,Journal of Magnetism and Magnetic Materials, vol. 165, 1997, pp. 111-115.

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