Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Channel stop layer
Patent
1999-02-03
2000-05-16
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Channel stop layer
257204, 257376, 257400, H01L 2358
Patent
active
06064110&
ABSTRACT:
An integrated digital circuit is protected from reverse engineering by fabricating all transistors of like conductivity with a common size and geometric layout, providing a common layout for different logic cells, connecting doped circuit elements of like conductivity with electrically conductive doped implants in the substrate rather than metalized interconnections, and providing non-functional apparent interconnections that are interrupted by non-discernable channel stops so that all cells falsely appear to have a common interconnection scheme. The camouflage is enhanced by providing a uniform pattern of metal leads over the transistor array, with a uniform pattern of heavily doped implant taps from the transistors for connection to the leads; undesired tap-lead connections are blocked by channel stops.
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Frederiksen, Thomas M. "Intuitive CMOS Electronics" McGraw-Hill Publsihing Co. 1989, pp. 134-135.
Baukus James P.
Chow Lap Wai
Clark Jr. William M.
Carroll J.
Duraiswamy Vijayalakshmi D.
Hughes Electronics Corporation
Lortz Bradley K.
Sales Michael W.
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