Diffusion using a solid state source

Details Diffusion using a solid state source Diffusion using a solid state source

1990-09-11

1992-06-30

Kunemund, Robert

Fishing, trapping, and vermin destroying

437247, 437987, 437 81, 148 332, 148DIG15, 148DIG37, H01L 3100

Patent

active

051262819

ABSTRACT:
Method for deposit of a p type dopant from a dopant layer into a predetermined region of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined region. A second semiconductor layer, doped with a lower concentration of an n type dopant, is later deposited so that the high concentration p type dopant layer lies between the predetermined region and the n type dopant layer. The p type dopant is diffused into the predetermined region by thermally driven diffusion, which may be carried out at a lower temperature or for a shorter diffusion time interval than with conventional diffusion, and p type dopant diffusion may extend over greater distances.

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