Diffusion stop method for forming silicon oxide during the fabri

Details Diffusion stop method for forming silicon oxide during the fabri Diffusion stop method for forming silicon oxide during the fabri

1986-01-08

1988-12-06

Childs, Sadie L.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 231, 427 99, 427255, 4272552, 4272553, 4272557, 437 67, 437108, 437238, 437241, B05D 512, C23C 1640

Patent

active

047895608

ABSTRACT:
High quality silicon oxide is grown for integrated circuits by oxidizing poly-crystalline silicon under an oxygen gas flow. A diffusion stop layer of thermal silicon nitride is formed on the underlying substrate prior to the deposition of the poly layer to be oxidized. The nitride layer isolates the substrate from diffused oxygen within the poly layer during oxidation, permitting a non-critical, oxidation time. Extension of the oxidation period elimates extended imperfect or "loose" chemical bonds throughout the oxide layer formed. Corner stress common in trench applications is minimized because the nitride prevents oxidation in the substrate. The oxidation of undoped poly over doped poly proceeds conformally because the nitride layer therebetween inhibits the enhanced oxidation effect of impurities in the doped poly.

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Bassous, "Fabricating Submicrometer Silicon Devices", IBM Tech. Disclosure Bulletin, vol. 15, No. 6, pp. 1823-1825, Nov. 1972.

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