Diffusion source and method of preparing

Details Diffusion source and method of preparing Diffusion source and method of preparing

1980-10-31

1982-03-02

Dean, R.

Specialized metallurgical processes, compositions for use therei

Processes

Free metal or alloy reductant contains magnesium

75251, C22C 2800

Patent

active

043176801

ABSTRACT:
The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion source consists of pure silicon powder diffused with a p-type impurity.

REFERENCES:
patent: 4169727 (1979-10-01), Morgan

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