Diffusion soldered semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead

Reexamination Certificate

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Details

C257S736000, C257S737000

Reexamination Certificate

active

07851910

ABSTRACT:
The invention relates to a process for the multi-stage production of diffusion-soldered joints for power components with semiconductor chips, the melting points of diffusion-soldering alloys and diffusion-soldered joints being staggered in such a manner that a first melting point of the first diffusion-soldering alloy is lower than a second melting point of the second diffusion-soldering alloy, and the second melting point being lower than a third melting point of a first diffusion-soldered joint of the first diffusion-soldering alloy.

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Chin et al., Advances in bonding technology for electronic packaging, Journal of Electronic Packaging, vol. 115, Jun. 1993, 1 pp.

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