Diffusion simulation method for impurities using mesh points and

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system

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703 12, 703 14, 716 20, 39550021, G06F 9455, G06F 1750

Patent

active

060802006

ABSTRACT:
A total impurity concentration which is a result of the solution of a diffusion equation at the immediately preceding point of time is used to solve, for each mesh point, an equation for determining an electrically active impurity concentration to approximately determine an electrically active impurity concentration. A ratio between the approximate value of the electrically active impurity concentration and the total concentration of the impurities at the preceding point of time is determined for each mesh point. A value of the ratio is determined by interpolating values at mesh points at the opposite ends of each mesh branch. A diffusion equation which includes the total concentration of the impurities as a variable and employs an effective diffusion constant is solved to determine a total impurity concentration at the present point of time of analysis.

REFERENCES:
patent: 5103415 (1992-04-01), Omura et al.
patent: 5671395 (1997-09-01), Akiyama
patent: 5675522 (1997-10-01), Akiyama
patent: 5677846 (1997-10-01), Kumashiro
patent: 5774696 (1998-06-01), Akiyama
patent: 5784302 (1998-07-01), Kumashiro
patent: 5819073 (1998-10-01), Nakamura
patent: 5828586 (1998-10-01), Yokota
patent: 5889680 (1999-03-01), Yokota
patent: 5930494 (1999-07-01), Akiyama
patent: 5963732 (1999-10-01), Syo
patent: 6006026 (1999-12-01), Kumashiro
patent: 6011914 (2000-01-01), Akiyama
R. Dan, "Process Device Simulation Technique", pp. 26-28.
S.M. Sze, "VLSI Technology", 1983, pp. 398-403.

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