Diffusion simulating method

Details Diffusion simulating method Diffusion simulating method

1998-09-17

2000-11-14

Trammell, James P.

Data processing: structural design, modeling, simulation, and em

Simulating electronic device or electrical system

703 12, 703 2, G06F 1750

Patent

active

061482765

ABSTRACT:
A diffusion simulating method which is capable of defining an impurity flux even if one impurity in one material region is changed into plural types of impurities in the other material region on a material interface. For simulating the diffusion of the impurities in a system which includes a first material region, a second material region and a interface disposed between the first material region and the second material region, impurity flux J(i.sub.A,j.sub.B) on the A/B interface is defined between optional impurity i.sub.A in material region A and optional impurity j.sub.B in material region B. Then, total fluxes J.sup.total (i.sub.A), J.sup.total (j.sub.B) of each type of impurity are determined and added to impurity diffusion equations, and simultaneous equations are set up by these diffusion equations and solved.

REFERENCES:
patent: 5502643 (1996-03-01), Fujinaga
patent: 5504016 (1996-04-01), Aronowitz
patent: 5784302 (1998-07-01), Kumashiro
patent: 5930494 (1999-07-01), Akiyama
patent: 5963732 (1999-10-01), Syo
patent: 6006026 (1999-12-01), Kumashiro
patent: 6011914 (2000-01-01), Akiyama
patent: 6041174 (2000-03-01), Akiyama
patent: 6080200 (2000-06-01), Kumashiro
Rorris et al., "A New Approach to the Simulation of the Coupled Point Defects and Impurity Diffusion", IEEE Trans. on Computer-Aided Design of ICs and Systems, vol. 9, Issue 10, pp. 1113-1122, Oct. 1990.
Okada et al. "Non-Equilibrium Diffusion Process Modeling Based on Three-Dimesional Simulator and a Regulated Point-Defect Injection Experiment", Tech. Digest, Intern. Electron Devices Meeting, 1990, ppl 733-736, Dec. 1990.
Taniguchi et al., "Process Modeling and Simulation: Boundary Conditions for Point Defect-Based Impurity Diffusion Model", IEEE Trans. on CAD of ICs and Systems, vol.9, Issue 11, pp. 1177-1183, Nov. 1990.
Yamamoto et al., "Boundary Condition for Grain Boundary Segregation", Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, pp. 340-345, Jun. 1987.
Sakumoto et al., "Simulation of Reverse Short Channel Effects with a Consistent Point-Defect Diffusion Model", Intern. Conf. on Simulation of SemiCond. Processes and Devices, pp. 137-140, Sep. 1997.
Federov et al., "Monte-Carlo Program MODEX: Simulation of Point Defect Clustering During Irradiation and Subsequent Annealing", Computational Materials Science, vol. 9, Issue 3-4, pp 309-324, Jan. 1998.
Ryo Dan, "Process Device Simulation Gijutsu (Process Device Simulation Technology)", pp. 18-29, Apr., 1990, Sangyo Tosho Publishing Co., Ltd.
C.P. Ho, J.D. Plummer, S.E. Hansen and R.W. Dutton, "VLSI Process Modeling-SUPREM III", IEEE Transactions of Eelctron Devices, vol. ED-30, No. 11, pp 1438-1453, Nov., 1983.

Affiliated with

Also associated with

Rating

Diffusion simulating method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diffusion simulating method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diffusion simulating method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2074812