Diffusion resistor structure with silicided contact areas, and m

Details Diffusion resistor structure with silicided contact areas, and m Diffusion resistor structure with silicided contact areas, and m

1997-07-22

1999-03-30

Chang, Joni

Semiconductor device manufacturing: process

Making passive device

Resistor

438382, H01L 2120

Patent

active

058888756

ABSTRACT:
This invention provides a diffusion resistor structure including a resistor-shaped diffusion having electrically integrated at opposite ends a first silicided contact area and a second silicided contact area. Polysilicon and oxide layers, or only an oxide layer, reside above a body region of the diffusion. The method provides for formation of the diffusion resistor with silicided contacts by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent dopant out diffusion step is performed. Selective etching is then utilized to remove the undoped polysilicon layer, leaving a polysilicon cap over the body region of the diffusion. A second region of the diffusion comprises the first contact area and second contact area, which are silicided once the body region is protected.

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