Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-12-21
1985-03-05
Saba, W. G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148187, 252950, 427 85, H01L 21225, H01L 2120
Patent
active
045028982
ABSTRACT:
A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF.sub.2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.
REFERENCES:
patent: 3907616 (1975-09-01), Wiemer
patent: 3925121 (1975-12-01), Touchy
patent: 4115164 (1978-09-01), J/a/ ger et al.
patent: 4177298 (1979-12-01), Shigeta et al.
patent: 4213808 (1980-07-01), Thompson et al.
patent: 4264381 (1981-04-01), Thompson et al.
"Zn-Diffused In.sub.0.53 Ga.sub.0.47 As/InP Avalanche Photodetector", Applied Physics Letters, 35(6), Y. Matsushima, pp. 466-468, (1979).
"Low Dark Current, High Efficiency Planar In.sub.0.53 Ga.sub.0.47 As/InP P-I-N Photodiodes", IEEE Electron Device Letters, vol. EDL-2, No. 11, S. R. Forrest, pp. 283-285, (1981).
"Planar Type Vapor-Phase Epitaxial In.sub.0.53 Ga.sub.0.47 As Photodiode", IEEE Electron Device Letters, vol. EDL-1, No. 4, N. Susa, pp. 55-57, (1980).
Heterostructure Lasers, H. C. Casey, Jr. et al., Academic Press, (1978) p. 33.
"Plasma Enhanced CVD Si.sub.3 N.sub.4 Film Applied to InP Avalanche Photodiodes", Japanese Journal of Applied Physics, vol. 19, No. 11, (1980), N. Susa et al., pp. L675-L678.
Camlibel Irfan
Guggenheim Howard J.
Singh Shobha
Van Uitert LeGrand G.
Zydzik George J.
AT&T Bell Laboratories
Nilsen Walter G.
Saba W. G.
LandOfFree
Diffusion procedure for semiconductor compound does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diffusion procedure for semiconductor compound, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diffusion procedure for semiconductor compound will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1732746