Diffusion of impurities into semiconductor using semi-closed inn

Details Diffusion of impurities into semiconductor using semi-closed inn Diffusion of impurities into semiconductor using semi-closed inn

1981-08-07

1983-11-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, H01L 21223

Patent

active

044153856

ABSTRACT:
A dual-enclosure semi-closed diffusion wherein an outer enclosure is evacuatable and an inner enclosure has a limited aperture, the inner enclosure includes a diffusion vessel having an aperture and a baffle for partially blocking the aperture to leave the limited aperture.
The outer enclosure is not directly exposed to impurity vapor and sustains a pressure difference, while the inner enclosure is not subjected to a substantial pressure difference.

REFERENCES:
patent: 3377216 (1968-04-01), Raithel
patent: 3573116 (1971-03-01), Cohen
patent: 3589953 (1971-06-01), Traxler
patent: 3852129 (1974-12-01), Diguet
patent: 3948696 (1976-04-01), Inaniwa et al.
patent: 3997379 (1976-12-01), Roshowski
patent: 4124417 (1978-11-01), Sirot et al.
Rosnowski, "Aluminum Diffusion into Silicon in an Open Tube High Vacuum System", J. Electrochem. Soc., vol. 125, No. 6, Jun. 1978, pp. 957-962.

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