Diffusion of dopant into a semiconductor wafer

Details Diffusion of dopant into a semiconductor wafer Diffusion of dopant into a semiconductor wafer

1984-12-21

1986-05-13

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148190, H01L 21385

Patent

active

045884544

ABSTRACT:
A process for doping a semiconductor material is performed during a deposition phase in a plurality of steps, first at a relatively low temperature to form a high concentration glass formation layer of the dopant on a semiconductor wafer at a high rate, and then raising the temperature slowly to provide an initial drive-in of the dopant. After etch removal of excess glass formation, the wafers are subjected to a base diffusion at an elevated temperature in an oxidizing atmosphere.

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Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, N.Y. 1983, pp. 398 and 399.
Periodic Table of the Elements, Sargent-Welch Scientific Co., Skokie, Ill.

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