Diffusion of dopant from optical coating and single step formati

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136261, 148188, 148190, 252950, 357 30, 357 52, H01L 21225, H01L 3104

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042512859

ABSTRACT:
The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound by partial hydrolysis and polymerization. The solution is applied to the surface of a silicon chip. The chip is then heated which converts the solution to a solid oxide coating which meets the antireflective optical film requirements and induces the migration of the dopants into the chip, forming a PN junction in the chip. The method also provides deep and uniform junction formation or diffusion without resulting in excessive carrier concentration.

REFERENCES:
patent: 4101351 (1978-07-01), Shah et al.
A. D. Haigh, "Fired Through Printed Contacts on Antireflection Coated Silicon Terrestrial Solar Cells," Conf. Record, 12th IEEE Photovoltaic Specialists Conf., (1976), pp. 360-361.
W. Luft, "Status of TiOx Antireflective Coating in the U.S.," Conf. Record 10th IEEE Photovoltaic Specialists Conf., (1973), pp. 174-179.

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