Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy

Details Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy

1977-01-06

1978-05-16

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148187, 148188, H01L 21208

Patent

active

040897133

ABSTRACT:
A method of adjusting donor concentration in a body of mercury cadmium telluride comprising the steps of contacting the mercury cadmium telluride with a quantity of donor material selected from the group consisting of gallium and gallium alloys containing up to 3% of aluminum, tin or cadmium and heating the body at a temperature of at least 200.degree. C for a sufficient time to diffuse the donor material within the body. The donor material is placed in contact with the body of mercury cadmium telluride by immersing the body in a molten quantity of the donor material to wet the surface thereof. Further included is the step of removing any undistributed donor material after heating. Also disclosed is a method of adjusting the donor concentration in the first region of mercury cadmium telluride with respect to a second adjacent region by practicing the process of this invention on the first region only. Since donor materials tend to increase the N-type concentration, a PN junction can be formed from P-type material and an N N+ junction may be formed from N-type material.

REFERENCES:
patent: 3692594 (1972-09-01), Cannuli
patent: 3745073 (1973-07-01), Kun et al.
patent: 3949223 (1976-04-01), Schmit et al.
patent: 4003759 (1977-01-01), Koehler

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