Diffusion of conductivity modifiers into a semiconductor body

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148186, 148187, H01L 21223

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active

039973794

ABSTRACT:
A method of diffusing conductivity modifiers into a semiconductor body is disclosed. The method employs an open system operated under a relatively high vacuum. A silicon alloy serves as the source of conductivity modifiers. Control of the dopant vapor pressure during diffusion is provided by controlling the composition of the silicon alloy. Additional control of the diffusion is provided by controlling the temperature of the system during diffusion and by regulating the vacuum drawn during diffusion.

REFERENCES:
patent: 3589953 (1971-06-01), Traxler
patent: 3658606 (1972-04-01), Lyons et al.
patent: 3725145 (1973-04-01), Maki
patent: 3752711 (1973-08-01), Kooi et al.

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