Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-01-05
1984-05-29
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, 148188, H01L 21225, H01L 21265
Patent
active
044513038
ABSTRACT:
A method for producing a semiconductor element which can form a deep P-type impurity region by a diffusion of aluminum. A porous alumina layer is first formed on a semiconductor substrate. Then, a diffusion-protective layer formed of a material having a large oxygen-diffusion-inhibiting ability such as Al.sub.2 O.sub.3 is formed on the porous alumina layer. Subsequently, aluminum ions are implanted in the porous alumina layer through the diffusion-protective layer. Thereafter, a heat treatment is performed to diffuse the aluminum of the aluminum ion-implanted region in the semiconductor substrate, and a P-type impurity region is formed. Alternatively, a porous alumina layer is formed on the semiconductor substrate, and an aluminum layer is then formed thereon. The diffusion-protective layer is formed on the aluminum layer, and a heat treatment is then performed, thereby diffusing the aluminum forming the aluminum layer in the semiconductor substrate, and a P-type impurity region is thus formed.
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patent: 4393577 (1983-07-01), Imai
Baliga, "Deep Planar Gallium and Aluminum Diffusion in Silicon", J. Electrochem. Soc.: Solid-State Science and Technology, pp. 292-296, Feb. 1979.
Hiraki Shun-ichi
Kikuchi Kiyoshi
Miyagawa Masafumi
Yawata Shigeo
Ozaki G.
Tokyo Shibaura Denki Kabushiki Kaisha
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