Diffusion mask and fabrication method for forming pn-junction el

Details Diffusion mask and fabrication method for forming pn-junction el Diffusion mask and fabrication method for forming pn-junction el

1996-01-19

1997-12-23

Trinh, Michael

Fishing, trapping, and vermin destroying

437160, 437234, H01L 2138

Patent

active

057007144

ABSTRACT:
A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusion mask, diffusing an impurity from the diffusion source film into the substrate, and removing the diffusion source film with buffered hydrofluoric acid. Electrode lines can then be formed directly on the aluminum-nitride diffusion mask, which is not etched by buffered hydrofluoric acid.

REFERENCES:
patent: 3907616 (1975-09-01), Weimer
patent: 3909119 (1975-09-01), Wollery
patent: 4058413 (1977-11-01), Welch et al.
patent: 4149307 (1979-04-01), Henderson
patent: 4320410 (1982-03-01), Nishizawa et al.
patent: 4506281 (1985-03-01), Nishizawa et al.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 5523590 (1996-06-01), Ogihara et al.
patent: 5530268 (1996-06-01), Ogihara et al.

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