Diffusion guarded metal-oxide-silicon field effect transistors

Details Diffusion guarded metal-oxide-silicon field effect transistors Diffusion guarded metal-oxide-silicon field effect transistors

1975-03-14

1976-07-06

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 357 23, 357 41, 357 89, H01L 2122

Patent

active

039679888

ABSTRACT:
Metal-oxide-silicon field effect transistors (MOSFET) are shown utilizing diffusion guarding of the gate electrode of a MOSFET device and utilizing the drain of one MOSFET device as the source of the next integrally formed MOSFET device. Other types of isolation shown include the surrounding of a functional unit with a source diffusion area, and/or permanently connecting a gate electrode to a potential level for preventing signal flow past such a gate.

REFERENCES:
patent: 3440502 (1969-04-01), Lin et al.
patent: 3518750 (1970-07-01), Moyle
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3850708 (1974-11-01), Imaizumi et al.

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