Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1997-04-15
2000-04-04
Teska, Kevin J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257275, G06G 748
Patent
active
060471174
ABSTRACT:
Disclosed is a diffusion-equation-based method of determining the time-domain response of an IC interconnect to an input voltage signal. Time-dependent voltage response determinations are accomplished analytically in the Laplace domain, with appropriate boundary conditions, treating the voltage response as a superposition of transmitted and reflected diffusions, based on parasitics as known quantities per unit length. The voltage response is thus determined by summing distinct reflected diffusions originating at both sides of the interconnect. The analysis proceeds on the assumption that only a selected small number of reflective components--normally only four--are required for sufficient accuracy. Voltage response from a sequence of interconnects is determined by treating the voltage response from the first interconnect as the input to the second, and repeating such looping with successive interconnects. A final inverse transform may be accomplished to express the response in the time domain. The method is limited to implementation on a computer, and an appropriately programmed computer comprises the apparatus of the invention.
REFERENCES:
patent: 5652761 (1997-07-01), Battersby
Kahng Andrew B.
Muddu Sudhakar
Dawes Daniel L.
Do Thuan
Teska Kevin J.
The Regents of the University of California
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