Stock material or miscellaneous articles – Web or sheet containing structurally defined element or... – Composite having voids in a component
Reexamination Certificate
2007-08-07
2007-08-07
McNeil, Jennifer (Department: 1775)
Stock material or miscellaneous articles
Web or sheet containing structurally defined element or...
Composite having voids in a component
C428S698000, C428S446000, C106S287160
Reexamination Certificate
active
10320111
ABSTRACT:
A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion barrier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.
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U.S. Appl. No. 09/502,729, filed on Feb. 11, 2000.
Cohen Stephan A.
Gates Stephen McConnell
Grill Alfred
Patel Vishnubhai V.
McNeil Jennifer
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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