Diffusion-barrier materials for thick-film piezoresistors and se

Electrical resistors – Resistance value responsive to a condition – Force-actuated

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338 13, 338 2, 338 42, H01C 1010

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active

058983597

ABSTRACT:
A thick-film strain-sensing structure for a media-compatible, high-pressure sensor. The strain-sensing structure generally includes a metal diaphragm, at least one electrical-insulating layer on the diaphragm, an interface layer on the electrical-insulating layer, and at least one thick-film piezoresistor on the interface layer for sensing deflection of the diaphragm. The interface layer and the electrical-insulating layers are preferably formed by thick-film processing, as done for the piezoresistors. For compatibility with the metal diaphragm, the electrical-insulating layer has a CTE near that of the diaphragm. The interface layer is formulated to inhibit and control diffusion of the electrical-insulating layers into the piezoresistors. For this purpose, the interface layer is formed from a composition that contains, in addition to a suitable organic media, alumina, zinc oxide, and at least one glass frit mixture comprising lead oxide, a source of boron oxide such as boric acid, silica and alumina. Additional constituents of the interface layer preferably include titania, cupric oxide, manganese carbonate as a source for manganese monoxide, and cobalt carbonate as a source of cobalt oxide.

REFERENCES:
patent: 4125820 (1978-11-01), Marshall
patent: 4320664 (1982-03-01), Rehn et al.
patent: 4416932 (1983-11-01), Nair
patent: 4651120 (1987-03-01), Aagard
patent: 4959262 (1990-09-01), Charles et al.
patent: 5058435 (1991-10-01), Terry et al.
patent: 5089172 (1992-02-01), Allison et al.
patent: 5295395 (1994-03-01), Hocker et al.
patent: 5353003 (1994-10-01), Maurer
patent: 5463367 (1995-10-01), Ellis
White, An Assessment of Thick-Film Piezoresistors on Insulated Steel Substrates, Hybrid Circuits, No. 20, (Sep. 1989), pp. 23-27.
Electro-Science Laboratories, Inc., Application Notes for Thick Film Heaters Made from Dielectric Tape Bonded Stainless Steel Substrates, (1994).
Stein et al., Thick Film Heaters Made From Dielectric Tape Bonded Stainless Steel Substrates, ISHM '95 Proceedings, Boston MA (1994), pp. 125-129.
Wahlers et al., Dielectric Tape Bonded Stainless Steel Substrates for High Power Packages, Hybrid Circuitry and Heater Uses, (1994).
Chitale et al., High Gauge Factor Thick Film Resistors for Strain Gauges, Hybrid Circuit Technology, (May 1989).
Chitale et al., Piezoresistivity in High GF Thick Film Resistors: Sensor Design and Very Thin YSZ Substrates, Proceedings 7th IM Conference, Yokohama, Japan (Jun. 1992). pp. 561-570.
Moriwaki et al., Interactions Between Thick Film Resistors and Alumina Substrate, Proceedings 7th IM Conference, Yokohama, Japan (Jun. 1992).
Prabhu et al., Interactions Between Base Metal Thick Film Inks and High Temperature Porcelain-Coated Steel Substrates, ISHM Symposium, Chicago IL (Oct. 1994), pp.331-340.

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