Diffusion barrier for long wavelength laser diodes

Details Diffusion barrier for long wavelength laser diodes Diffusion barrier for long wavelength laser diodes

1982-04-27

1984-10-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 44, H01S 319

Patent

active

044792220

ABSTRACT:
A diffusion barrier is created in a n-type heterojunction layer adjacent to the active region of a semiconductor laser by doping the n-type layer with a periodic table group VI element. The diffusion barrier in the n-type layer prevents the migration of acceptors into that layer. The group VI elements are, in particular, sulfur (S), selinium (Se), and tellurium (Te). The acceptor of concern is zinc (Zn).

REFERENCES:
patent: 3653989 (1972-04-01), Widmer
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4233090 (1980-11-01), Hawrylo et al.
patent: 4371967 (1983-02-01), Wada et al.
Brown, K. E., "Effective Distribution Coefficients of Some Group VI Elements in Indium Phosphide Group by Liquid Phase Epitaxy", Solid State Electronics, 1974, pp. 505-507.
Cusano, D. A., "Radiative Recombination from GaAs Directly Excited by Electron Beams", Solid State Communications, 1964.
Hirtz et al., "Low Threshold GaInAsP/InP Lasers With Good Temperature Dependence Grown by Low Pressure MOVPE", Electronics Letters, vol. 17, No. 3, Feb. 5, 1981, pp. 113-115.

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