Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-02-21
2006-02-21
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257SE27006
Reexamination Certificate
active
07002228
ABSTRACT:
A magnetic random access memory device including a pinned layer having a diffusion barrier, a sense layer, and a tunnel barrier to electrically couple the pinned layer to the sense layer. A method for forming a magnetic random access memory device including forming, on a substrate, a sense layer, forming a tunnel barrier on the sense layer, forming a pinned layer on the tunnel barrier, where the pinned layer includes a diffusion barrier to stop manganese atoms from diffusing to the interface of the tunnel barrier, and annealing the substrate, the sense layer, the tunnel barrier and the pinned layer. The diffusion barrier can include a native oxide having a thickness up to about seven angstroms or an aluminum oxide having a thickness up to about seven angstroms.
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Deak James G.
Kowalewski Maciej M.
Ho Tu-Tu
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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