Diffuser for uniform gas distribution in semiconductor processin

Coating apparatus – Gas or vapor deposition

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Details

118723ME, 118723MP, 118723R, 4272481, 4272551, C23C 1600

Patent

active

055956025

ABSTRACT:
Uniform distribution of a gas flow into a closed chamber (16) of semiconductor process equipment is enabled by using a porous sintered diffuser plate (30) having a preselected porosity and thickness as a gas diffuser. The porous diffuser plate is positioned in the equipment between the gas inlet (22) and the surface of a semiconductor wafer (18) such that the incoming gas must flow through the porous diffuser plate. In this manner, the gas is uniformly diffused through the plate due to its porous nature. As the gas exits the porous sintered plate on its bottom surface, the flow is laminar across the entire bottom surface of the porous plate. The semiconductor wafer is set a predetermined distance away from the bottom surface of the porous sintered plate where the gas supplied to its surface is uniform across the wafer surface.

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patent: 5227340 (1993-07-01), Pintchovski et al.
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