Diffused junction capacitor and process for producing the same

Details Diffused junction capacitor and process for producing the same Diffused junction capacitor and process for producing the same

1975-12-03

1976-07-13

Larkins, William D.

357 36, 357 48, 357 90, H01L 2993, H01L 2704

Patent

active

039697509

ABSTRACT:
A diffused junction capacitor having two P.sup.+ N.sup.+ junctions, one in the semiconductor substrate and one in an epitaxial layer thereon and exhibiting high capacitance per unit area.
A method for forming such a capacitor makes use of the fact that the outdiffusion rate for boron is much faster than the outdiffusion rate for arsenic, whereby, for instance, boron and arsenic diffused into the surface of a semiconductor wafer can, after the growth of an N.sup.- epitaxial layer, be diffused into the N.sup.- epitaxial layer. Since the boron outdiffuses much faster, it will cover a larger area than the arsenic outdiffusion. This will, in turn, result in two P.sup.+-N.sup.+ junctions, one in the substrate and one in the N.sup.- epitaxial layer.

REFERENCES:
patent: 2744970 (1956-05-01), Shockley
patent: 2964648 (1960-12-01), Doucette et al.
patent: 2991371 (1961-07-01), Lehovic
patent: 2993155 (1971-07-01), Goetzberger
patent: 3193418 (1965-07-01), Cooper et al.
patent: 3260902 (1966-07-01), Porter
patent: 3337374 (1967-08-01), Dobson
patent: 3441815 (1969-04-01), Pollock et al.
patent: 3449643 (1969-06-01), Imgizumi
patent: 3460010 (1969-08-01), Domenico et al.
patent: 3474308 (1969-10-01), Kronlage
patent: 3474309 (1969-10-01), Stehlin
patent: 3502951 (1970-03-01), Hunts
patent: 3538397 (1970-11-01), Davis
patent: 3544863 (1970-12-01), Price et al.
patent: 3558375 (1971-01-01), Engeler
patent: 3560277 (1971-02-01), Lloyd et al.
patent: 3581164 (1971-05-01), Pfander et al.
patent: 3581165 (1971-05-01), Seelbach et al.
patent: 3584266 (1971-06-01), Schilling
patent: 3617827 (1971-11-01), Schmitz et al.
patent: 3639814 (1972-02-01), Engbert
Ashar, IBM Tech. Discl. Bull. vol. 11, No. 11, Apr. 1969, pp. 1529-1530.
Vora, "PIN Isolation . . . ", IEEE Trans on Electron Devices, vol. Ed 15 No. 9 pp. 655-659 (9-1968).
Gay et al., SCP and Solid State Technology, Apr. 1966, pp. 24-27.

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