Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Reexamination Certificate
2005-05-31
2005-05-31
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
C257S566000, C257S588000, C257S592000, C438S364000, C438S365000, C438S366000, C438S367000, C438S388000
Reexamination Certificate
active
06900519
ABSTRACT:
The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced base resistence. The preferred design forms the extrinsic base by diffusing dopants from a dopant source layer and into the extrinsic base region. This diffusion of dopants forms at least a portion of the extrinsic base. In particular, the portion adjacent to the intrinsic base region is formed by diffusion. This solution avoids the problems caused by traditional solutions that implanted the extrinsic base. Specifically, by forming at least a portion of the extrinsic base by diffusion, the problem of damage to base region is minimized. This reduced damage enhances dopant diffusion into the intrinsic base. Additionally, the formed extrinsic base can have improved resistence, resulting in an improved maximum frequency for the bipolar device. Additionally, the extrinsic base can be formed with a self-aligned manufacturing process that reduces fabrication complexity.
REFERENCES:
patent: 3904450 (1975-09-01), Evans et al.
patent: 4252581 (1981-02-01), Anantha et al.
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4860085 (1989-08-01), Feygenson
patent: 5117271 (1992-05-01), Comfort et al.
patent: 5213989 (1993-05-01), Fitch et al.
patent: 5268314 (1993-12-01), Conner
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5593905 (1997-01-01), Johnson et al.
patent: 5629556 (1997-05-01), Johnson
patent: 5761080 (1998-06-01), DeCamp et al.
patent: 6437376 (2002-08-01), Ozkan
patent: 961006640 (1996-01-01), None
patent: PCT/US99/07644 (1999-04-01), None
IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983, “Transistor Collector Doping for Reduced Capacitance”, W.P. Dumke, p. 492.
IBM Technical Disclosure Bulletin, vol. 25, No. 4, Sep. 1982, “Using a Doubly Implanted Polysilicon Layer for Forming Base and Emitter Regions”, C.G. Jambotkar, ppp. 1887-1889.
IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, “Polycide Bipolar Transistor Process”, F. Barson, et al., pp. 3424-3426.
Cantell Marc W.
Dunn James S.
Harame David L.
Johnson Robb A.
Lanzerotti Louis D.
Canale Anthony
Kang Donghee
Schmeiser Olsen & Watts
LandOfFree
Diffused extrinsic base and method for fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diffused extrinsic base and method for fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diffused extrinsic base and method for fabrication will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3416834