X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Reexamination Certificate
2006-10-03
2006-10-03
Glick, Edward J. (Department: 2882)
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
C378S073000
Reexamination Certificate
active
07116754
ABSTRACT:
A monochromator4is used to direct X-rays from X-ray source2onto a sample14as a convergent beam. The sample14is in a growth chamber. The sample is rotated, and diffraction measurements are made in parallel with multichannel detector22. A specific reflection is used so that the intensity against angle graph measured in the multichannel detector gives information about the vertical lattice parameter. To compensate for wobble inevitably introduced by the rotation of the sample, short time measurements are made and summed.
REFERENCES:
patent: 4274000 (1981-06-01), Goebel
patent: 5636258 (1997-06-01), Okumura et al.
patent: 5923720 (1999-07-01), Barton et al.
patent: 6421414 (2002-07-01), Huber
patent: 6882739 (2005-04-01), Kurtz et al.
patent: 2001/0043668 (2001-11-01), Hayashi et al.
patent: 2002/0097837 (2002-07-01), Fanton et al.
patent: 10346433 (2005-05-01), None
patent: 20002 234793 (2002-08-01), None
Niggemeier et al., “X-Ray Reflectometer of the Diagnostics of Thin Films During Growth”, J. Appl. Cyrst. (1997) 30, pp. 905-908.
Bader A S et al, “Real-Time I N Situ X-Ray Diffraction as a Method to Control Epitaxial Growth” Applied Physics Letters, vol. 82, No. 26, Jun. 30, 2003, pp. 4684-4686.
Malhotra A K et al, “In situ/ex situ X-ray analysis system for thin sputteredfilms” Surf Coat Techn0l; Surface & Coatings Technology Nov. 10, 1998, vol. 110, No. 1-2, Nov. 10, 1998, pp. 105-110.
J. F. Whitacre et al, “Real -time/in situ diffr action study o f phase and microstructural ev o l u t i o n i n sputtered beta-Ta/Ta205 films” J. Vac. Sci. Technol. A, vol. 19, No. 6, Nov. 2001-Dec. 2001, pp. 2910-2919.
Kenji Ishida et al,: “Structural Evaluation of Epitaxially Grown Organic Evaporated Films by Total Reflection X-Ray Diffractometer” Journal of Applied Physics, vol. 73, No. 11, Jun. 1, 1993, pp. 7338-7343.
Luken E et al, “Growth monitoring of W/Si X-ray mu l ti layers by X-ray r e f l e c t i v i t yand kinetic ellipsometry” Proceedings of the SPIE, vol. 2253, Jun. 6, 1994, pp. 324-332.
Kharchenko Alexander
Lischka Klaus
Bromberg & Sunstein LLP
Glick Edward J.
Midkiff Anastasia S.
PANalytical B.V.
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