Diffraction mask for the fabrication of semiconductor devices

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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355 53, 359562, 359563, 359564, G03F 900, G03B 2742, G02B 2744, G02B 2746

Patent

active

055716415

ABSTRACT:
A dummy mask used in the fabrication of semiconductor devices, capable of forming an ultra-fine pattern by diffracting incident light while controlling or cutting off light components vertically incident on a mask formed with a pattern, thereby increasing the depth of focus and improving the resolution. The dummy mask includes a transparent substrate provided at its upper surface with a diffracting pattern for primarily diffracting light from a light source incident on the dummy mask and at its lower surface with a controlling pattern for removing vertically incident light not diffracted by the diffraction patterns.

REFERENCES:
patent: 4223083 (1980-09-01), Engstrom
patent: 4947413 (1990-08-01), Jewell et al.
patent: 5208629 (1993-05-01), Matsuo et al.
patent: 5387484 (1995-02-01), Doany et al.

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