Patent
1986-06-18
1988-05-24
Arnold, Bruce Y.
35016222, 35016223, 35016224, G02B 518
Patent
active
047461926
ABSTRACT:
A diffraction grating having a delineated crystallographic diffraction plane which ensuess from a procedure of alternately growing two kinds single crystal layers on a single crystal substrate into multilayers, exposing a crystallographic plane other than the plane of growth in the above-mentioned single crystal layers of the two kinds of single crystal layers in the exposed crystallographic plane; and a process for producing a diffraction grating mentioned above.
REFERENCES:
patent: 3585121 (1971-06-01), Franks
patent: 3688109 (1972-08-01), Gamble
patent: 4610757 (1986-09-01), Khoe et al.
Tsang, Won-Tieu et al., "Profile and Groove-Depth Control in GaAs Diffraction Gratings Fabricated by Preferential Chemical Etching in H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 -H.sub.2 O System", Applied Physics Letters, vol. 28, No. 1, Jan. 1, 1976, pp. 44-46.
Arnold Bruce Y.
Hitachi , Ltd.
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